PART |
Description |
Maker |
IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
PHP20N06E PHP20N06 |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BUK463-100A |
PowerMOS transistor
|
Philips Semiconductors
|
PHP1N50E |
PowerMOS transistor
|
Philips Semiconductors
|
PHP3N50 |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PHD3N20E |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PHP5N40 |
PowerMOS transistor
|
NXP Semiconductors Philips Semiconductors
|
BUK465-200A |
PowerMOS transistor
|
NXP Semiconductors Philips Semiconductors
|
BUK446-800A BUK446-800B |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BUK464-200A |
PowerMOS transistor
|
NXP Semiconductors Philips Semiconductors
|
PHD12N10E |
PowerMOS transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|